ETCHING AND MECHANICAL GRINDING FILM-LAYERS STACKED ON A SEMICONDUCTOR SUBSTRATE

ETCHING AND MECHANICAL GRINDING FILM-LAYERS STACKED ON A SEMICONDUCTOR SUBSTRATE

In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first materia...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANG, She Yu, YANG, Sheng Pin, KONG, Jian Jun, ZHANG, Yian Yi, YU, Qin Xu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first material layer and the second side. At least a portion of the first material layer is removed using a first chemical etching process, thereby exposing the second material layer. At least a portion of the second material layer is removed using a second chemical etching process. A portion of the substrate is then mechanically removed from the second side.