PLASMA PROCESSING APPARATUS

Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which...

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Bibliographische Detailangaben
Hauptverfasser: ARASE, Takao, ISOZAKI, Masakazu, MORI, Masahito, YOKOGAWA, Kenetsu, SAKAI, Yousuke
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.