POST CONTACT AIR GAP FORMATION
A method of making a semiconductor device with an air gap for a terminal of a semiconductor device includes forming a sacrificial sidewall spacer and removing the spacer after the formation of contact structures for the semiconductor device. The air gap is located in portions of the wafer where the...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of making a semiconductor device with an air gap for a terminal of a semiconductor device includes forming a sacrificial sidewall spacer and removing the spacer after the formation of contact structures for the semiconductor device. The air gap is located in portions of the wafer where the sacrificial air gap was removed. Since the contacts are formed prior to the removal of the sacrificial spacers, air gaps can advantageously be formed without electrically conductive contact material undesirably being deposited in locations of the desired air gap. |
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