ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR MEMORY HAVING DIFFERENT DISTANCES BETWEEN SWITCHING ELEMENTS AND VARIABLE RESISTANCE ELEMENTS
An electronic device includes a semiconductor memory. The semiconductor memory includes a first variable resistance element, a first switching element coupled to the first variable resistance element via a first line, a second variable resistance element, and a second switching element coupled to th...
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Sprache: | eng |
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Zusammenfassung: | An electronic device includes a semiconductor memory. The semiconductor memory includes a first variable resistance element, a first switching element coupled to the first variable resistance element via a first line, a second variable resistance element, and a second switching element coupled to the second variable resistance element via a second line, wherein a distance between the first switching element and the first variable resistance element is larger than a distance between the second switching element and the second variable resistance element, and wherein a second path from a first terminal of the second switching element to the second variable resistance element includes a resistance component, a resistance of the second path being greater than a resistance of a first path, the first path being from a first terminal of the first switching element to the first variable resistance element. |
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