METHODS FOR FABRICATING ARTIFICIAL NEURAL NETWORKS (ANN) BASED ON DOPED SEMICONDUCTOR ELEMENTS

METHODS FOR FABRICATING ARTIFICIAL NEURAL NETWORKS (ANN) BASED ON DOPED SEMICONDUCTOR ELEMENTS

A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer inclu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Afzali-Ardakani, Ali, Oida, Satoshi, Hannon, James Bowler, Copel, Matthew Warren
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
PHYSICS
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Beschreibung
Zusammenfassung:A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.