HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS
An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer p...
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| creator | Firouzdor, Vahid Sun, Jennifer Y |
| description | An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2019194817A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2019194817A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2019194817A13</originalsourceid><addsrcrecordid>eNrjZPDw8HT3UAgIDfIMiVTwdQ1x9PHxdFYI8Q9QcPZ3DFFw8w9SCHb19XT293MJdQ4B8nwd_ULdHJ1DgDr83IGKfAP8_Vz9QoJ5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGloaWJhaG5o6ExcaoA5-kuSQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS</title><source>esp@cenet</source><creator>Firouzdor, Vahid ; Sun, Jennifer Y</creator><creatorcontrib>Firouzdor, Vahid ; Sun, Jennifer Y</creatorcontrib><description>An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm.</description><language>eng</language><subject>APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190627&DB=EPODOC&CC=US&NR=2019194817A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190627&DB=EPODOC&CC=US&NR=2019194817A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Firouzdor, Vahid</creatorcontrib><creatorcontrib>Sun, Jennifer Y</creatorcontrib><title>HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS</title><description>An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm.</description><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDw8HT3UAgIDfIMiVTwdQ1x9PHxdFYI8Q9QcPZ3DFFw8w9SCHb19XT293MJdQ4B8nwd_ULdHJ1DgDr83IGKfAP8_Vz9QoJ5GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgaGloaWJhaG5o6ExcaoA5-kuSQ</recordid><startdate>20190627</startdate><enddate>20190627</enddate><creator>Firouzdor, Vahid</creator><creator>Sun, Jennifer Y</creator><scope>EVB</scope></search><sort><creationdate>20190627</creationdate><title>HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS</title><author>Firouzdor, Vahid ; Sun, Jennifer Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2019194817A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Firouzdor, Vahid</creatorcontrib><creatorcontrib>Sun, Jennifer Y</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Firouzdor, Vahid</au><au>Sun, Jennifer Y</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS</title><date>2019-06-27</date><risdate>2019</risdate><abstract>An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS |
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