HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS

An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer p...

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Bibliographische Detailangaben
Hauptverfasser:	Firouzdor, Vahid, Sun, Jennifer Y
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm.