COMPOSITION FOR FORMING SILICA LAYER, SILICA LAYER, AND ELECTRONIC DEVICE

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si-O to an a...

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Bibliographische Detailangaben
Hauptverfasser:	HWANG, Byeonggyu, KWAK, Taeksoo, NOH, Kunbae, JANG, Junyoung, SAKONG, Jun, SEO, Jinwoo, BAE, Jin-Hee
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOUNDS THEREOF CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INORGANIC CHEMISTRY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-METALLIC ELEMENTS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si-O to an area of Si-H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si-O to an area of Si-H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).