METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the conc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zaima, Kazunori, Ishino, Takaya, Takahashi, Atsushi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a fluorine element. The method further includes performing a second process of exposing the second film to a second gas containing a hydrogen element or a fluid generated from the second gas.