MULTI-CHIP MODULE FOR MRAM DEVICES

A memory device comprises a memory bank comprising a plurality of memory addresses. The memory device further comprises a first level dynamic redundancy register comprising data storage elements and a pipeline bank coupled to the memory bank and the first level dynamic redundancy register, wherein the pipeline bank is configured to: (a) write a data word into the memory bank at a selected one of the plurality of memory addresses; (b) verify the data word written into the memory bank to determine whether the data word was successfully written by the write; and (c) responsive to a determination that the data word was not successfully written by the write, writing the data word into the first level dynamic redundancy register, wherein the memory bank is fabricated on a first die and further wherein the first level dynamic redundancy register is fabricated on a second die.