CMP APPARATUS AND METHOD FOR ESTIMATING FILM THICKNESS

A method for estimating film thickness in CMP includes the following operations. A substrate with a film formed thereon is disposed over a polishing pad with a slurry dispensed between the film and the polishing pad. A CMP operation is performed to reduce a thickness of the film. An in-situ electroc...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, YU-MIN, CHEN, SHENGAU, KUANG, HSUNUNG, LIANG, CHIN-WEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING PERFORMING OPERATIONS PHYSICS POLISHING SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for estimating film thickness in CMP includes the following operations. A substrate with a film formed thereon is disposed over a polishing pad with a slurry dispensed between the film and the polishing pad. A CMP operation is performed to reduce a thickness of the film. An in-situ electrochemical impedance spectroscopy (EIS) measurement is performed during the CMP operation by an EIS device to estimate the thickness of the film real-time. The CMP operation is ended when the estimated thickness of the film obtained from the fit parameters of the first equivalent electrical circuit model reaches a target thickness.