COMPOSITION FOR CONDUCTING MATERIAL REMOVAL OPERATIONS AND METHOD FOR FORMING SAME

A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a sl...

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Bibliographische Detailangaben
Hauptverfasser:	Bottiglieri, Stephen, Nahas, Nabil, Ward, Douglas E, Kuan, Chun-Lung
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DYES INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES
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Beschreibung
Zusammenfassung:	A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.