LOW ASPECT RATIO INTERCONNECT

A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANG, CHIHAO, Huang, Elbert E, Briggs, Benjamin D, RATH, DAVID L, PEETHALA, CORNELIUS BROWN, PATLOLLA, RAGHUVEER R
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.