CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-CHANGE MATERIAL

CHIP CONTAINING AN ONBOARD NON-VOLATILE MEMORY COMPRISING A PHASE-CHANGE MATERIAL

An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located...

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Bibliographische Detailangaben
Hauptverfasser: BRUN, Philippe, ODDOU, Jean-Pierre, BROUSSOUS, Lucile, ZOLL, Stephane, HINSINGER, Olivier, WEBER, Olivier, BOIVIN, Philippe, GALPIN, David, FAVENNEC, Laurent, ARNAUD, Franck, MORIN, Pierre
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An electronic chip includes memory cells made of a phase-change material and a transistor. First and second vias extend from the transistor through an intermediate insulating layer to a same height. A first metal level including a first interconnection track in contact with the first via is located over the intermediate insulating layer. A heating element for heating the phase-change material is located on the second via, and the phase-change material is located on the heating element. A second metal level including a second interconnection track is located above the phase-change material. A third via extends from the phase-change material to the second interconnection track.