SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing r...

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Bibliographische Detailangaben
Hauptverfasser:	WANG, YU-JEN, TING, SHYH-FANN, YAUNG, DUN-NIAN, TSENG, HSIAO-HUI, WU, WEI CHUANG, CHEN, CHUN-YUAN, LIU, JENNG, CHIANG, YEN-TING, LI, SHENGAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.