NOVEL CONTACT STRUCTURE

NOVEL CONTACT STRUCTURE

A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lo, Sean, Wu, Cheng-Yi, Cheng, Chung-Liang, Chiu, C.W, Hsiao, Ethan, Sung, Hui-Lin, Hung, Sz-Yuan, Hsieh, Chih-Wei, Lee, Chin-Szu, Chu, Li-Hsuan, LIN, Hong-Ying, Tu, Alan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.