A MEMBRANE FOR EUV LITHOGRAPHY

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consistin...

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Hauptverfasser:	ZDRAVICOV, Aleksandar Nikolov, NIKIPELOV, Andrey, JANSSEN, Paul, NOTENBOOM, Arnoud Willem, PÉTER, Mária, MAXIM, Nicolae, VAN DER ZANDE, Willem Joan, BANERJEE, Nirupam, LENDERINK, Egbert, RISPENS, Gijsber, KRUIZINGA, Matthias, PILIEGO, Claudia, VERBURG, Antonius Willem, NASALEVICH, Maxim Aleksandrovich, ABEGG, Erik Achilles, SCHUH, Nadja, VLES, David Ferdinand, BLAUW, Michiel Alexander, VAN ZWOL, Pieter-Jan, VERMEULEN, Johannes Petrus Martinus Bernardus, VAN DE KERKHOF, Marcus Adrianus, VOORTHUIJZEN, Willem-Pieter, BROUNS, Derk Servatius Gertruda
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.