DUAL GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

DUAL GATE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain ext...

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Bibliographische Detailangaben
Hauptverfasser: WARRICK, Scott, LARSEN, Christian, DOUGHERTY, Justin, YING, Ying, BARR, Alexander, TARABBIA, Marc L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) may include a MOSFET having a channel region, a drain, and a source, a first gate formed proximate to the channel region, a drain extension region formed proximate to the drain, and a second gate formed proximate to the drain extension region.