PROCESS OF FORMING SILICON NITRIDE FILM

A process of depositing a silicon nitride (SiN) film on a nitride semiconductor layer is disclosed. The process includes steps of: (a) loading an epitaxial substrate including the nitride semiconductor layer into a reaction furnace at a first temperature and converting an atmosphere in the furnace i...

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Bibliographische Detailangaben
1. Verfasser:	SUMIYOSHI, Kazuhide
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A process of depositing a silicon nitride (SiN) film on a nitride semiconductor layer is disclosed. The process includes steps of: (a) loading an epitaxial substrate including the nitride semiconductor layer into a reaction furnace at a first temperature and converting an atmosphere in the furnace into nitrogen (N2); (b) raising a temperature in the furnace to a second temperature keeping a pressure in the furnace higher than 30 kPa; (c) converting the atmosphere in the furnace to ammonia (NH3) at the second temperature; and (d) beginning the deposition by supplying SiH2Cl2 as a source gas for silicon (Si) at a second pressure lower than 100 Pa. A feature of the process is that a time span from the temperature in the furnace reaches the critical temperature to the supply of SiH2Cl2 is shorter than 20 minutes, where the first pressure becomes the equilibrium pressure at the critical temperature.