ETCHING APPARATUS AND ETCHING METHOD

ETCHING APPARATUS AND ETCHING METHOD

According to one embodiment, an etching apparatus for etching a semiconductor with an aid of a noble metal catalyst, includes a reaction vessel configured to accommodate a semiconductor substrate provided with a catalyst layer including a noble metal, and a feeder configured to feed, to the reaction...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: HIGUCHI, Kazuhito
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, an etching apparatus for etching a semiconductor with an aid of a noble metal catalyst, includes a reaction vessel configured to accommodate a semiconductor substrate provided with a catalyst layer including a noble metal, and a feeder configured to feed, to the reaction vessel, an oxidizer, hydrogen fluoride, an organic additive, and carbon dioxide in a supercritical or subcritical state.