METHOD OF PREPARING FOR REACTOR RESTART FOR MANUFACTURING EPITAXIAL WAFER

As a process of preparing for a restart of an epitaxial reactor in which epitaxial growth for a wafer is performed, an embodiment includes injecting a nitrogen gas into a process chamber provided in the epitaxial reactor and purging the gas for a predetermined time; heating the inside of the process...

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Bibliographische Detailangaben
Hauptverfasser:	KANG, Dong-Ho, CHO, Man-Kee
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	As a process of preparing for a restart of an epitaxial reactor in which epitaxial growth for a wafer is performed, an embodiment includes injecting a nitrogen gas into a process chamber provided in the epitaxial reactor and purging the gas for a predetermined time; heating the inside of the process chamber non-linearly according to time; and measuring MCLT for the epitaxial wafer after growing the epitaxial wafer. A method of preparing for a restart of an epitaxial reactor of the embodiment removes moisture and contaminants stagnated inside the process chamber at a higher rate compared to the related art and also reduces a time to reach the minimum value of MCLT for preparing for a restart of an epitaxial reactor, and thus a time for preparing for a restart of an epitaxial reactor may also be reduced.