AQUEOUS SILICA SLURRY AND AMINE CARBOXYLIC ACID COMPOSITIONS SELECTIVE FOR NITRIDE REMOVAL IN POLISHING AND METHODS OF USING THEM

AQUEOUS SILICA SLURRY AND AMINE CARBOXYLIC ACID COMPOSITIONS SELECTIVE FOR NITRIDE REMOVAL IN POLISHING AND METHODS OF USING THEM

The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Penta, Naresh Kumar, Guo, Yi, Tettey, Kwadwo E, Van Hanehem, Matthew, Mosley, David
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
CHEMISTRY
DYES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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Beschreibung
Zusammenfassung:The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.