INTEGRATED DEVICE COMPRISING A CAPACITOR AND INDUCTOR STRUCTURE COMPRISING A SHARED INTERCONNECT FOR A CAPACITOR AND AN INDUCTOR
An integrated device that includes a substrate, a first interconnect over the substrate and a second interconnect comprising a first portion and a second portion. The integrated device further comprising a first dielectric layer between the first interconnect and the first portion of the second inte...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An integrated device that includes a substrate, a first interconnect over the substrate and a second interconnect comprising a first portion and a second portion. The integrated device further comprising a first dielectric layer between the first interconnect and the first portion of the second interconnect such that the first interconnect vertically overlaps with the first dielectric layer and the first portion of the second interconnect. The integrated device also includes a second dielectric layer formed over the substrate. The first interconnect, the first dielectric layer and the first portion of the second interconnect are configured to operate as a capacitor. The first portion and the second portion of the second interconnect are configured to operate as an inductor. |
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