OXIDE SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR THIN FILM

Provided is an oxide semiconductor thin film for which only carrier concentration has been reduced while maintaining a high carrier mobility, as well as a manufacturing method therefor. Provided is an amorphous oxide semiconductor thin film that includes indium and gallium as oxides, further include...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATSUMURA, Fumihiko, SHIRAKI, Mana, NAKAYAMA, Tokuyuki, NISHIMURA, Eiichiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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