OXIDE SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR THIN FILM

OXIDE SEMICONDUCTOR THIN FILM, MANUFACTURING METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR THIN FILM

Provided is an oxide semiconductor thin film for which only carrier concentration has been reduced while maintaining a high carrier mobility, as well as a manufacturing method therefor. Provided is an amorphous oxide semiconductor thin film that includes indium and gallium as oxides, further include...

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Bibliographische Detailangaben
Hauptverfasser: MATSUMURA, Fumihiko, SHIRAKI, Mana, NAKAYAMA, Tokuyuki, NISHIMURA, Eiichiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Provided is an oxide semiconductor thin film for which only carrier concentration has been reduced while maintaining a high carrier mobility, as well as a manufacturing method therefor. Provided is an amorphous oxide semiconductor thin film that includes indium and gallium as oxides, further includes hydrogen, has a gallium content such that the molecular ratio Ga/(In+Ga) is 0.15 to 0.55, and has a hydrogen content as measured by secondary ion mass spectrometry of 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3.