Method of Forming Compound Semiconductor Body

A first semiconductor body including type IV semiconductor material is provided. A second semiconductor body including type III-V semiconductor material is provided. A first adhesion layer is formed on the first semiconductor body. A second adhesion layer is formed on the second semiconductor body....

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Bibliographische Detailangaben
Hauptverfasser: Curatola, Gilberto, Siemieniec, Ralf, Kueck, Daniel, Esteve, Romain
Format: Patent
Sprache:eng
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Zusammenfassung:A first semiconductor body including type IV semiconductor material is provided. A second semiconductor body including type III-V semiconductor material is provided. A first adhesion layer is formed on the first semiconductor body. A second adhesion layer is formed on the second semiconductor body. The first and the second semiconductor bodies are bonded together by adhering the first and the second adhesion layers to one another.