Method of Forming Compound Semiconductor Body

Method of Forming Compound Semiconductor Body

A first semiconductor body including type IV semiconductor material is provided. A second semiconductor body including type III-V semiconductor material is provided. A first adhesion layer is formed on the first semiconductor body. A second adhesion layer is formed on the second semiconductor body....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Curatola, Gilberto, Siemieniec, Ralf, Kueck, Daniel, Esteve, Romain
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A first semiconductor body including type IV semiconductor material is provided. A second semiconductor body including type III-V semiconductor material is provided. A first adhesion layer is formed on the first semiconductor body. A second adhesion layer is formed on the second semiconductor body. The first and the second semiconductor bodies are bonded together by adhering the first and the second adhesion layers to one another.