METHODS FOR IMPROVING PERFORMANCE IN HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL USING PLASMA AND/OR THERMAL TREATMENT

METHODS FOR IMPROVING PERFORMANCE IN HAFNIUM OXIDE-BASED FERROELECTRIC MATERIAL USING PLASMA AND/OR THERMAL TREATMENT

A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes arranging a substrate within a processing chamber of the substrate processing system, depositing an HfO2 layer on the substrate, performing a plasma treatment of the HfO2 layer, and annealing the HfO2 la...

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Bibliographische Detailangaben
Hauptverfasser: Zhu, Zhongwei, Choe, Hwan Sung, YOON, Hyungsuk Alexander
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes arranging a substrate within a processing chamber of the substrate processing system, depositing an HfO2 layer on the substrate, performing a plasma treatment of the HfO2 layer, and annealing the HfO2 layer to form ferroelectric hafnium HfO2.