METHOD FOR DEPOSITING A COPPER SEED LAYER ONTO A BARRIER LAYER AND COPPER PLATING BATH

The present invention relates to an aqueous electroless copper plating bath, including a source for Cu(II) ions, glyoxylic acid as the reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH,...

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Bibliographische Detailangaben
Hauptverfasser:	SCHREIER, Hans-Jürgen, DAMMASCH, Matthias, HARYONO, Marco, KARASAHIN, Sengül
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to an aqueous electroless copper plating bath, including a source for Cu(II) ions, glyoxylic acid as the reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof, wherein the electroless copper plating bath is substantially free of Na+, K+ and tetraalkylammonium ions.