SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

A semiconductor device includes a semiconductor layer between a collector electrode and an emitter electrode. The semiconductor layer includes a base region of a first conductivity type, a first collector layer of a second conductivity type between the collector electrode in a cell region in which a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MATSUDAI, Tomoko
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor layer between a collector electrode and an emitter electrode. The semiconductor layer includes a base region of a first conductivity type, a first collector layer of a second conductivity type between the collector electrode in a cell region in which an emitter layer is arranged and the base layer, and a second collector layer of the second conductivity type between the collector electrode in a boundary region in which a gate wiring is arranged and the base layer. A peak value of an impurity concentration of the second conductivity type in the second collector layer is higher than a peak value of an impurity concentration of the second conductivity type in the first collector layer.