High-Dielectric Constant Capacitor Structures on III-V Substrates

A semiconductor structure includes a III-V semiconductor structure; a first electrode; a first barrier layer disposed over the first electrode; a first adhesion layer disposed over the first electrode; a first passivation layer disposed over the first adhesion layer; a dielectric layer disposed over...

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Hauptverfasser:	Dungan, Thomas, Nikkel, Phil, Abrokwah, Jonathan, Yeldandi, Satish
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Dungan, Thomas Nikkel, Phil Abrokwah, Jonathan Yeldandi, Satish
description	A semiconductor structure includes a III-V semiconductor structure; a first electrode; a first barrier layer disposed over the first electrode; a first adhesion layer disposed over the first electrode; a first passivation layer disposed over the first adhesion layer; a dielectric layer disposed over the first passivation layer; a second passivation layer disposed over the dielectric layer; a second adhesion layer disposed over the second passivation layer; a second barrier layer disposed over the second adhesion layer; and a second electrode disposed over the second barrier layer.
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title	High-Dielectric Constant Capacitor Structures on III-V Substrates
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