ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAVING HIGHER SENSITIVITY IN RESPONSE TO DYNAMIC BIASING

A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnit...

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Bibliographische Detailangaben

Hauptverfasser:	Ayele, Getenet Tesega, Monfray, Stephane
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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