ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAVING HIGHER SENSITIVITY IN RESPONSE TO DYNAMIC BIASING

ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) HAVING HIGHER SENSITIVITY IN RESPONSE TO DYNAMIC BIASING

A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ayele, Getenet Tesega, Monfray, Stephane
Format: Patent
Sprache:eng
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.