Low Temperature Process for Forming Silicon-Containing Thin Layer

The present invention relates to a method for forming a silicon-containing thin layer at a low temperature, and in particular, to a method for forming a silicon-containing thin layer by carrying out atomic layer deposition (ALD) at a low temperature.

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Bibliographische Detailangaben
Hauptverfasser:	Lingam, Hima Kumar, Yun, Suhyong, Choi, Yunjung, Suh, Daewoong, Yoo, Seung Ho, Park, Sun Kyung, Jeong, Heonjong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a method for forming a silicon-containing thin layer at a low temperature, and in particular, to a method for forming a silicon-containing thin layer by carrying out atomic layer deposition (ALD) at a low temperature.