SELF-ALIGNED INTERCONNECTION FOR INTEGRATED CIRCUITS

Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such a...

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Bibliographische Detailangaben
Hauptverfasser: Somaschini, Roberto, Pellizzer, Fabio, Rigano, Antonino
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Methods and structures provide horizontal conductive lines of fine pitch and self-aligned contacts extending from them, where the contacts have at least one dimension with a more relaxed pitch. Buried hard mask materials permit self-alignment of the lines and contacts without a critical mask, such as for word-line electrode lines and word-line contacts in a memory device.