Method of forming a metal silicide transparent conductive electrode
A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in an orderly arrangement on a substrate. The metal silicide nanowire network can be formed by printing a first set of multiple parallel silicon nanowires on the substrate and printin...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in an orderly arrangement on a substrate. The metal silicide nanowire network can be formed by printing a first set of multiple parallel silicon nanowires on the substrate and printing a second set of multiple parallel silicon nanowires over the first set of multiple parallel silicon nanowires such that said first set is perpendicular to said second set. A metal layer can be formed on the silicon nanowires. A silicidation anneal process is performed such that metal silicide nanowires are formed and fused together in an orderly arrangement, forming a grid network. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed. |
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