Deposition Of Cobalt Films With High Deposition Rate

Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

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Bibliographische Detailangaben
Hauptverfasser:	Chang, Mei, Ma, Paul F, Vasiknanonte, Fuqun Grace, Wrench, Jacqueline S, Kesapragada, Sree Rangasai V, Lu, Jiang, Yu, Sang Ho, Sasaki, Nobuyuki, Zhou, Jing
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.