ENHANCING DRIVE CURRENT AND INCREASING DEVICE YIELD IN N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTORS

ENHANCING DRIVE CURRENT AND INCREASING DEVICE YIELD IN N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTORS

Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Han, Shu-Jen, Yurkas, John J, Farmer, Damon B, Tang, Jianshi
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.