3D INTEGRATED CIRCUIT DEVICE HAVING A BUTTRESS STRUCTURE FOR RESISTING DEFORMATION

3D INTEGRATED CIRCUIT DEVICE HAVING A BUTTRESS STRUCTURE FOR RESISTING DEFORMATION

An integrated circuit includes a stack in a stack region and a region outside the stack region. A buttress structure disposed outside the stack includes a fence-shaped, electrically passive element configured to oppose expansion of materials outside the stack region in a direction toward the stack r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yang, Ta-Hung, Hung, Yung-Tai, Luoh, Tuung, Chen, Kuang-Chao
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit includes a stack in a stack region and a region outside the stack region. A buttress structure disposed outside the stack includes a fence-shaped, electrically passive element configured to oppose expansion of materials outside the stack region in a direction toward the stack region.