PLASMA PROCESSING APPARATUS

A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the pro...

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Bibliographische Detailangaben
Hauptverfasser:	IKEDA, Taro, KOMATSU, Tomohito, NAKAGOMI, Jun, NAGAYOSI, Kei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A plasma processing apparatus includes a microwave introducing module provided at a ceiling portion of a processing chamber and configured to introduce a microwave for generating plasma of a gas into the processing chamber; and a plurality of gas supply holes formed at the ceiling portion of the processing chamber and configured to introduce the gas into a plasma processing space. Each of the plurality of gas supply holes includes a fine hole and a cavity that is expanded from the fine hole and opened to the plasma processing space. A diameter of the cavity on the plasma processing space side is 3 mm or more and is ⅛ or less of a wavelength of a surface wave of a microwave in the plasma.