TERMINATION STRUCTURE FOR GALLIUM NITRIDE SCHOTTKY DIODE INCLUDING JUNCTION BARRIAR DIODES

A method for forming a nitride-based Schottky diode includes forming a nitride-based epitaxial layer on a front side of a nitride-based semiconductor body; forming a first dielectric layer on the nitride-based epitaxial layer; etching the first dielectric layer and the nitride-based epitaxial layer to the nitride-based semiconductor body to define an opening for an anode electrode of the nitride-based Schottky diode and to form an array of islands of the nitride-based epitaxial layer in the opening, the first dielectric layer having an end that is recessed from an end of the nitride-based epitaxial layer near the opening. In another embodiment, the first dielectric layer and the nitride-based epitaxial layer have a slant profile at a side facing the opening for the anode electrode.