METHOD FOR FORMING PIXEL STRUCTURE

METHOD FOR FORMING PIXEL STRUCTURE

A method for forming a pixel structure is provided. The method includes: forming a gate electrode layer on a substrate; forming a first insulating layer on the gate electrode layer and the substrate; forming a semiconductor layer on the first insulating layer; forming a pixel electrode layer on the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUNG, Shu-Kai, CHIANG, Chia-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:A method for forming a pixel structure is provided. The method includes: forming a gate electrode layer on a substrate; forming a first insulating layer on the gate electrode layer and the substrate; forming a semiconductor layer on the first insulating layer; forming a pixel electrode layer on the first insulating layer and the semiconductor layer; forming a source/drain electrode layer on the pixel electrode layer, the semiconductor layer, and the first insulating layer; forming a second insulating layer on the semiconductor layer, the pixel electrode layer, the source/drain electrode layer, and the first insulating layer; and forming a common electrode layer on the second insulating layer, in which an orthogonal projection of the semiconductor layer on the substrate is complementary to an orthogonal projection of the common electrode layer on the substrate.