METHOD TO MODULATE THE WAFER EDGE SHEATH IN A PLASMA PROCESSING CHAMBER

METHOD TO MODULATE THE WAFER EDGE SHEATH IN A PLASMA PROCESSING CHAMBER

The present disclosure generally relates to methods of and apparatuses for controlling a plasma sheath near a substrate edge. The apparatus includes an auxiliary electrode that may be positioned adjacent an electrostatic chuck. The auxiliary electrode is recursively fed from a power source using equ...

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Bibliographische Detailangaben
Hauptverfasser: KENNEY, Jason A, LEE, Wonseok, HUSAIN, Anwar, RAMASWAMY, Kartik, LUDWIG, Jeffrey, ZHANG, Chunlei, WANG, Haitao
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure generally relates to methods of and apparatuses for controlling a plasma sheath near a substrate edge. The apparatus includes an auxiliary electrode that may be positioned adjacent an electrostatic chuck. The auxiliary electrode is recursively fed from a power source using equal length and equal impedance feeds. The auxiliary electrode is vertically actuatable, and is tunable with respect to ground or other frequencies responsible for plasma generation. Methods of using the same are also provided.