Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device
A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes...
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| creator | Mahler, Joachim Kolmeder, Guenther |
| description | A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region. |
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The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. 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The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgMyC9PLVIITs3NTM7PSylNLskvUnBJLctMTi1WSMxLUUhU8E0tychPUUgDSrjlF-Vm5qUDBXFr42FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGFsaGpuYmJo6GxsSpAgBYXjfs</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Mahler, Joachim</creator><creator>Kolmeder, Guenther</creator><scope>EVB</scope></search><sort><creationdate>20181101</creationdate><title>Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device</title><author>Mahler, Joachim ; Kolmeder, Guenther</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2018315744A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Mahler, Joachim</creatorcontrib><creatorcontrib>Kolmeder, Guenther</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mahler, Joachim</au><au>Kolmeder, Guenther</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device</title><date>2018-11-01</date><risdate>2018</risdate><abstract>A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device |
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