Power Semiconductor Devices and a Method for Forming a Power Semiconductor Device
A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A power semiconductor device includes a power transistor arranged in a power device region of a semiconductor substrate. The power semiconductor device further includes a first circuit arranged in a first circuit region of the semiconductor substrate. The power semiconductor device further includes a second circuit arranged in a second circuit region of the semiconductor substrate. The first circuit region is arranged at a first edge of the semiconductor substrate. The second circuit region is arranged at a second edge of the semiconductor substrate. The power device region is arranged between the first circuit region and the second circuit region. |
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