NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06≤Y/X≤0.12.