METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device is provided. The method comprises arranging an insulator, forming a hole in the insulator, first exposing for exposing a first portion of a photoresist arranged on the insulator, second exposing for exposing a second portion of the photoresist, after the first and second exposing, forming a trench in the insulator in accordance with etching the insulator using a resist pattern formed by developing the photoresist as a mask and embedding a conductor in the hole and the trench. The trench includes a first trench corresponding to the exposure of the first portion of the resist pattern and a second trench corresponding to the exposure of the second portion of the resist pattern. The first and second trench each communicate with the hole and the hole is deeper than the first and second trench.