Selective Deposition Of Tungsten For Simplified Process Flow Of Tungsten Oxide Pillar Formation

Selective Deposition Of Tungsten For Simplified Process Flow Of Tungsten Oxide Pillar Formation

Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

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Bibliographische Detailangaben
Hauptverfasser: Wu, Yong, Chen, Yihong, Duan, Ziping, Mallick, Abhijit Basu, Gandikota, Srinivas
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.