SRAM BITLINE EQUALIZATION USING PHASE CHANGE MATERIAL

SRAM BITLINE EQUALIZATION USING PHASE CHANGE MATERIAL

Embodiments include techniques for static random access memory (SRAM) bitline equalization using phase change material (PCM). The techniques include detecting a defect in SRAM bitlines, and programming a variable resistance PCM cell to offset the detected defect. The techniques also include measurin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Huott, William V, McPadden, Adam J, Cadigan, David D, Saetow, Anuwat
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Embodiments include techniques for static random access memory (SRAM) bitline equalization using phase change material (PCM). The techniques include detecting a defect in SRAM bitlines, and programming a variable resistance PCM cell to offset the detected defect. The techniques also include measuring signal development time for the SRAM bitlines, and adjusting the programming of the variable resistance PCM cell based at least in part on the measured signal development for the SRAM bitlines.