REFLECTIVE MASK BLANK FOR EUV EXPOSURE, AND REFLECTIVE MASK

A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film...

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Bibliographische Detailangaben
1. Verfasser:	TANABE, Hiroyoshi
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n−1)2+k2)1/2>((nABS−1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.